PART |
Description |
Maker |
2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管 From old datasheet system N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
RJE0616JSP RJE0616JSP-00-J3 RJE0616JSP-15 |
Silicon P Channel MOS FET Series Power Switching -60V, -4A Silicon P Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N-CHANNEL SILICON J-FET
|
NEC
|
2SK3717 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|
2SK3718 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|